electron temperature造句
例句與造句
- Study on electron temperature of pulsed discharge plasma
大氣脈沖放電等離子體電子溫度的研究 - Time - resolved diagnosing of the electron temperature of laser - produced aluminum plasma
激光等離子體電子溫度的時(shí)間分辨診斷 - The spectrum can be fitted by maxwellian distribution , the hot electron temperature given by the slope is 67kev
用maxwellian分布擬合能譜，超熱電子溫度為67kev 。 - The spectrum can be fitted by maxwellian distribution , the hot electron temperature given by the slope is 85kev
能譜用maxwellian分布擬合，得到超熟電子溫度為85kev 。 - The increase of luminous efficiency is a result of the decreased cell voltage and electron temperature in discharge
當(dāng)氣體放電于較低電壓的情況下，電子溫度較低并可以提高發(fā)光要率。 - It's difficult to find electron temperature in a sentence. 用electron temperature造句挺難的
- As our best known , this is the first experimental measurement of so high hot electron temperature at moderated intensity , pre - pulse free condition
據(jù)我們所知，這是第一次報(bào)道在10 ~ ( 16 ) w cm ~ 2 、無(wú)預(yù)脈沖條件下，實(shí)驗(yàn)測(cè)量到這么高的超熱電子溫度。 - The variation with the time of the mean density of all particles , electron temperature and their space distributions in the discharge cell are calculated in this paper
使用eme模型模擬計(jì)算新型蔭罩式結(jié)構(gòu)和傳統(tǒng)的表面放電式結(jié)構(gòu)，對(duì)這兩種結(jié)構(gòu)的模擬結(jié)果進(jìn)行比較分析。 - From the scaling law about hot electron temperature given by vh model , the hot electron measured by experiment was reasonable , the temperature was higher than the temperature given by resonant absorption scaling law
真空吸收是產(chǎn)生高能超熱電子的主導(dǎo)過(guò)程，從真空吸收給出的超熱電子溫度定標(biāo)率來(lái)看，實(shí)驗(yàn)中測(cè)量得到的超熱電子溫度是合理的。 - A co2 laser with the optimized resonator is made and to be proved by experiments . this dissertation focus on the following problems : the kinetics process of the cvl and the co2 laser , the rate equations for the laser level population , electron temperature and electron density
本文的重點(diǎn)是：闡述清楚銅蒸汽激光和二氧化碳激光的動(dòng)力學(xué)過(guò)程，定量描述激光能級(jí)的粒子數(shù)速率方程、電子溫度和電子密度等速率方程 - The floating potential , electron temperature , ion density and flux density are all varied with the system parameters . the identical parameters we measured in our system is as follows , the electron temperature is from 1 to 4ev , ion density is among the magnitudes of i09 - io
文中重點(diǎn)研究了ecr等離子體的特性，并對(duì)我們的系統(tǒng)進(jìn)行了langmuir探針和faraday筒測(cè)試，研究了等離子體參數(shù)隨氣壓、微波功率、偏壓、氣體種類(lèi)等的變化。 - The effect of the form of electron distribution function on electron temperature was also discussed in the first part . in the second part , starting from kinetic equations , we discussed stimulated raman scattering ( srs ) by including both landau damping ( ld ) and the collisional damping ( cd )
第二部分從含有限碰撞效應(yīng)的vlasov - maxwell方程組出發(fā)，首先推得含碰撞阻尼和landau阻尼的描述受激raman散射的耦合方程組，然后討論受激raman散射的線(xiàn)性增長(zhǎng)率。 - This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film . by means of single probe and double probe , the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed . the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用單探針和雙探針診斷30mm高反應(yīng)室和50mm高反應(yīng)室在各種工藝條件下的離子密度和電子溫度，得到這兩個(gè)參數(shù)在反應(yīng)室軸向位置的空間分布、隨功率和氣壓的變化曲線(xiàn)、頂蓋接地和反應(yīng)室體積對(duì)它們的影響，結(jié)果表明離子密度為10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，電子溫度在4 10ev之間；當(dāng)頂蓋接地時(shí)，該處的等離子體密度明顯大于不接地；在同樣條件下， 50mm高反應(yīng)室內(nèi)的離子密度明顯大于30mm高反應(yīng)室。 - We then discuss the vibrational - rotational level transitions and the population rate equations for the laser . in addition , electron temperature , electron density and the mixtured gas temperature in the laser plasma are investigated in details . the third part is with regard to the optimal designs and the experiments of the lasers
在二氧化碳激光動(dòng)力學(xué)機(jī)理的研究中，比較詳細(xì)地討論了二氧化碳激光動(dòng)力學(xué)過(guò)程，給出了激光振動(dòng)-轉(zhuǎn)動(dòng)能級(jí)躍遷及其速率方程、激光等離子體電子密度和電子溫度，以及混合氣體的氣體溫度 - It was found that the linear growth rate of srs is reduced substantially due to ld and cd . srs can occur only for a region determined by both electron temperature and density . gap in the spectrum corresponding to raman scattering can be explained by the present model
結(jié)果表明碰撞阻尼和landau阻尼大大降低了受激raman散射的線(xiàn)性增長(zhǎng)率，并且碰撞阻尼和landau阻尼的共同作用使得受激raman散射只能在四分之一臨界密度以下區(qū)域的一窄小的密度范圍發(fā)生，我們這個(gè)理論模型可以解釋受激raman散射光譜上存在的“縫” ( gap )現(xiàn)象。 - Plasma characteristics of a rf ion source are investigated by emission spectroscopy . the spatiotemporal spectral line intensities of the first three atomic lines in hydrogen bahner series ( = 656 . 28 , 486 . 13 , 434 . 05nm ) of rf ion source plasma , are measured with calibrated optical multichannel analyzer ( oma ) . some plasma parameters , including electron temperature , hydrogen atom density and hydrogen ion density , are calculated and analyzed using partial local thermodynamic equilibrium ( plte ) theory and abel transform
實(shí)驗(yàn)采用絕對(duì)定標(biāo)后的光學(xué)多道分析系統(tǒng)( oma )測(cè)定了離子源等離子體不同時(shí)間和空間位置的氫原子巴耳末譜線(xiàn)系中前三條譜線(xiàn)( = 656 . 28 , 486 . 13 , 434 . 05nm )的強(qiáng)度，并采用plte的理論和abel變換方法，計(jì)算出了高頻離子源等離子體的電子溫度、氫原子濃度、氫離子濃度等參數(shù)在放電的不同階段和徑向分布情況，并進(jìn)行了簡(jiǎn)要分析。
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